Formation and stability of AsH bonds in H-implanted GaAs
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چکیده
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simulation and experimental studies for prediction mineral scale formation in oil field during mixing of injection and formation water
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DIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1991
ISSN: 0168-583X
DOI: 10.1016/0168-583x(91)95775-9